EPC
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Part Number
Manufacturer
Description
Unit Price
In Stock
EPC2040ENGRT
EPC
Manufacturer : EPC
Packaging : Tape & Reel (TR)
Series : eGaN®
Part Status : Discontinued at
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 15V
Current - Continuous Drain (Id) @ 25°C : 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 28 mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 0.93nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 100pF @ 6V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
Packaging : Tape & Reel (TR)
Series : eGaN®
Part Status : Discontinued at
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 15V
Current - Continuous Drain (Id) @ 25°C : 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 28 mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 0.93nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 100pF @ 6V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
0
100 in stock
EPC2045
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 7 mOhm @ 16A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 6.5nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 685pF @ 50V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 7 mOhm @ 16A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 6.5nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 685pF @ 50V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
0
100 in stock
EPC2045ENGRT
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 7 mOhm @ 16A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 6.5nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 685pF @ 50V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 7 mOhm @ 16A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 6.5nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 685pF @ 50V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
0
2948 in stock
EPC2046ENGRT
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 25 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs : 3.6nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 345pF @ 100V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 25 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs : 3.6nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 345pF @ 100V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
0
2406 in stock
EPC2047ENGRT
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 32A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 10 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs : 10.2nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 1050pF @ 100V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 32A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 10 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs : 10.2nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 1050pF @ 100V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
0
100 in stock
EPC2049ENGRT
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 5 mOhm @ 15A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs : 7.6nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 805pF @ 20V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 5 mOhm @ 15A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs : 7.6nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 805pF @ 20V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
0
3137 in stock
EPC2050ENGRT
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 350V
Current - Continuous Drain (Id) @ 25°C : 6.3A
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 65 mOhm @ 6A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs : 4.3nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 505pF @ 280V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die Outline (12-Solder Bar)
Package / Case : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 350V
Current - Continuous Drain (Id) @ 25°C : 6.3A
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 65 mOhm @ 6A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs : 4.3nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 505pF @ 280V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die Outline (12-Solder Bar)
Package / Case : Die
0
100 in stock
EPC2051
EPC
Manufacturer : EPC
Packaging : -
Series : *
Part Status : Active
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
Packaging : -
Series : *
Part Status : Active
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
0
5000 in stock
EPC2051ENGRT
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 1.7A
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 25 mOhm @ 3A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs : 2.3nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 280pF @ 50V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 1.7A
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 25 mOhm @ 3A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs : 2.3nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 280pF @ 50V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
0
2835 in stock
EPC2100
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs : 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs : 4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds : 475pF @ 15V, 1960pF @ 15V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs : 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs : 4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds : 475pF @ 15V, 1960pF @ 15V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
7544 in stock
EPC2100ENG
EPC
Manufacturer : EPC
Packaging : Tray
Series : eGaN®
Part Status : Discontinued at
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs : 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs : 4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds : 475pF @ 15V, 1960pF @ 15V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Tray
Series : eGaN®
Part Status : Discontinued at
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs : 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs : 4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds : 475pF @ 15V, 1960pF @ 15V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
100 in stock
EPC2100ENGRT
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs : 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs : 4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds : 475pF @ 15V, 1960pF @ 15V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs : 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs : 4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds : 475pF @ 15V, 1960pF @ 15V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
6546 in stock
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