EPC
Image
Part Number
Manufacturer
Description
Unit Price
In Stock
EPC2101
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 9.5A, 38A
Rds On (Max) @ Id, Vgs : 11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 3mA, 2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs : 2.7nC @ 5V, 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 30V, 1200pF @ 30V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 9.5A, 38A
Rds On (Max) @ Id, Vgs : 11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 3mA, 2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs : 2.7nC @ 5V, 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 30V, 1200pF @ 30V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
10000 in stock
EPC2101ENG
EPC
Manufacturer : EPC
Packaging : Tray
Series : eGaN®
Part Status : Discontinued at
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 9.5A, 38A
Rds On (Max) @ Id, Vgs : 11.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs : 2.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 30V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Tray
Series : eGaN®
Part Status : Discontinued at
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 9.5A, 38A
Rds On (Max) @ Id, Vgs : 11.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs : 2.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 30V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
100 in stock
EPC2101ENGRT
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 9.5A, 38A
Rds On (Max) @ Id, Vgs : 11.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs : 2.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 30V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 9.5A, 38A
Rds On (Max) @ Id, Vgs : 11.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs : 2.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 30V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
7430 in stock
EPC2102
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 23A
Rds On (Max) @ Id, Vgs : 4.4 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs : 6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 830pF @ 30V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 23A
Rds On (Max) @ Id, Vgs : 4.4 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs : 6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 830pF @ 30V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
9538 in stock
EPC2102ENG
EPC
Manufacturer : EPC
Packaging : Tray
Series : eGaN®
Part Status : Discontinued at
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 23A
Rds On (Max) @ Id, Vgs : 4.4 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs : 6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 830pF @ 30V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Tray
Series : eGaN®
Part Status : Discontinued at
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 23A
Rds On (Max) @ Id, Vgs : 4.4 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs : 6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 830pF @ 30V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
100 in stock
EPC2102ENGRT
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 23A (Tj)
Rds On (Max) @ Id, Vgs : 4.4 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs : 6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 830pF @ 30V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 23A (Tj)
Rds On (Max) @ Id, Vgs : 4.4 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs : 6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 830pF @ 30V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
6461 in stock
EPC2103
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 28A
Rds On (Max) @ Id, Vgs : 5.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs : 6.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 40V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 28A
Rds On (Max) @ Id, Vgs : 5.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs : 6.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 40V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
9570 in stock
EPC2103ENGRT
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 23A
Rds On (Max) @ Id, Vgs : 5.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs : 6.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 7600pF @ 40V
Power - Max : -
Operating Temperature : -
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 23A
Rds On (Max) @ Id, Vgs : 5.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs : 6.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 7600pF @ 40V
Power - Max : -
Operating Temperature : -
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
5256 in stock
EPC2104
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 23A
Rds On (Max) @ Id, Vgs : 6.3 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 800pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 23A
Rds On (Max) @ Id, Vgs : 6.3 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 800pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
9855 in stock
EPC2104ENG
EPC
Manufacturer : EPC
Packaging : Tray
Alternate Packaging
Series : eGaN®
Part Status : Discontinued at
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 23A
Rds On (Max) @ Id, Vgs : 6.3 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 800pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Tray
Alternate Packaging
Series : eGaN®
Part Status : Discontinued at
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 23A
Rds On (Max) @ Id, Vgs : 6.3 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 800pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
100 in stock
EPC2104ENGRT
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 23A
Rds On (Max) @ Id, Vgs : 6.3 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 800pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 23A
Rds On (Max) @ Id, Vgs : 6.3 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 800pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
1427 in stock
EPC2105
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 9.5A, 38A
Rds On (Max) @ Id, Vgs : 14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 2.5mA, 2.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : 2.5nC @ 5V, 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 40V, 1100pF @ 40V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 9.5A, 38A
Rds On (Max) @ Id, Vgs : 14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 2.5mA, 2.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : 2.5nC @ 5V, 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 40V, 1100pF @ 40V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
9990 in stock
New Original Stock
Competitive Prices
One-stop
Customer Service
Contact Eruic
- krics@eruic.com
- krics@eruic.com
- Room 25i, Block A, Duhui 100 Building, Zhonghang Road, Huaqiang North Street, Futian District, Shenzhen, Guangdong
Customer service
Copyright © 2025 Eruic. All rights reserved.
web.ui.design.webdesign www.wzdzkf.com
Powered by www.wzdzkf.com