EPC
Image
Part Number
Manufacturer
Description
Unit Price
In Stock
EPC2105ENG
EPC
Manufacturer : EPC
Packaging : Bulk
Alternate Packaging
Series : eGaN®
Part Status : Discontinued at
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 9.5A, 38A
Rds On (Max) @ Id, Vgs : 14.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 40V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Bulk
Alternate Packaging
Series : eGaN®
Part Status : Discontinued at
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 9.5A, 38A
Rds On (Max) @ Id, Vgs : 14.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 40V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
100 in stock
EPC2105ENGRT
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 9.5A
Rds On (Max) @ Id, Vgs : 14.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 40V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 9.5A
Rds On (Max) @ Id, Vgs : 14.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 40V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
3742 in stock
EPC2106
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 1.7A
Rds On (Max) @ Id, Vgs : 70 mOhm @ 2A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs : 0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 75pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 1.7A
Rds On (Max) @ Id, Vgs : 70 mOhm @ 2A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs : 0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 75pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
13272 in stock
EPC2106ENGRT
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 1.7A
Rds On (Max) @ Id, Vgs : 70 mOhm @ 2A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs : 0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 75pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 1.7A
Rds On (Max) @ Id, Vgs : 70 mOhm @ 2A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs : 0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 75pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
19707 in stock
EPC2107
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 1.7A, 500mA
Rds On (Max) @ Id, Vgs : 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs : 0.16nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 16pF @ 50V, 7pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 9-VFBGA
Supplier Device Package : 9-BGA (1.35x1.35)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 1.7A, 500mA
Rds On (Max) @ Id, Vgs : 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs : 0.16nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 16pF @ 50V, 7pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 9-VFBGA
Supplier Device Package : 9-BGA (1.35x1.35)
0
19030 in stock
EPC2107ENGRT
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Discontinued at
FET Type : 3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 1.7A, 500mA
Rds On (Max) @ Id, Vgs : 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs : 0.16nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 16pF @ 50V, 7pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 9-VFBGA
Supplier Device Package : 9-BGA (1.35x1.35)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Discontinued at
FET Type : 3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 1.7A, 500mA
Rds On (Max) @ Id, Vgs : 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs : 0.16nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 16pF @ 50V, 7pF @ 50V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 9-VFBGA
Supplier Device Package : 9-BGA (1.35x1.35)
0
100 in stock
EPC2108
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V, 100V
Current - Continuous Drain (Id) @ 25°C : 1.7A, 500mA
Rds On (Max) @ Id, Vgs : 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs : 0.22nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 22pF @ 30V, 7pF @ 30V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 9-VFBGA
Supplier Device Package : 9-BGA (1.35x1.35)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V, 100V
Current - Continuous Drain (Id) @ 25°C : 1.7A, 500mA
Rds On (Max) @ Id, Vgs : 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs : 0.22nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 22pF @ 30V, 7pF @ 30V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 9-VFBGA
Supplier Device Package : 9-BGA (1.35x1.35)
0
19465 in stock
EPC2108ENGRT
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V, 100V
Current - Continuous Drain (Id) @ 25°C : 1.7A, 500mA
Rds On (Max) @ Id, Vgs : 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs : 0.22nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 22pF @ 30V, 7pF @ 30V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 9-VFBGA
Supplier Device Package : 9-BGA (1.35x1.35)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V, 100V
Current - Continuous Drain (Id) @ 25°C : 1.7A, 500mA
Rds On (Max) @ Id, Vgs : 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs : 0.22nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 22pF @ 30V, 7pF @ 30V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 9-VFBGA
Supplier Device Package : 9-BGA (1.35x1.35)
0
5504 in stock
EPC2110
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Dual) Common Drain
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 120V
Current - Continuous Drain (Id) @ 25°C : 3.4A
Rds On (Max) @ Id, Vgs : 60 mOhm @ 4A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs : 0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 80pF @ 60V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : -
Package / Case : Die
Supplier Device Package : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Dual) Common Drain
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 120V
Current - Continuous Drain (Id) @ 25°C : 3.4A
Rds On (Max) @ Id, Vgs : 60 mOhm @ 4A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs : 0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 80pF @ 60V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : -
Package / Case : Die
Supplier Device Package : Die
0
24950 in stock
EPC2110ENGRT
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Dual) Common Source
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 120V
Current - Continuous Drain (Id) @ 25°C : 3.4A
Rds On (Max) @ Id, Vgs : 60 mOhm @ 4A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs : 0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 80pF @ 60V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Dual) Common Source
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 120V
Current - Continuous Drain (Id) @ 25°C : 3.4A
Rds On (Max) @ Id, Vgs : 60 mOhm @ 4A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs : 0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 80pF @ 60V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
14247 in stock
EPC2111
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 16A (Ta)
Rds On (Max) @ Id, Vgs : 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 2.2nC @ 5V, 5.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 230pF @ 15V, 590pF @ 15V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 16A (Ta)
Rds On (Max) @ Id, Vgs : 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 2.2nC @ 5V, 5.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 230pF @ 15V, 590pF @ 15V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
24498 in stock
EPC2111ENGRT
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 16A (Ta)
Rds On (Max) @ Id, Vgs : 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 2.2nC @ 5V, 5.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 230pF @ 15V, 590pF @ 15V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 16A (Ta)
Rds On (Max) @ Id, Vgs : 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 2.2nC @ 5V, 5.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 230pF @ 15V, 590pF @ 15V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
0
6776 in stock
New Original Stock
Competitive Prices
One-stop
Customer Service
Contact Eruic
- krics@eruic.com
- krics@eruic.com
- Room 25i, Block A, Duhui 100 Building, Zhonghang Road, Huaqiang North Street, Futian District, Shenzhen, Guangdong
Customer service
Copyright © 2025 Eruic. All rights reserved.
web.ui.design.webdesign www.wzdzkf.com
Powered by www.wzdzkf.com