EPC
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Part Number
Manufacturer
Description
Unit Price
In Stock
EPC2015C
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 53A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 4 mOhm @ 33A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 9mA
Gate Charge (Qg) (Max) @ Vgs : 8.7nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 1000pF @ 20V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 53A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 4 mOhm @ 33A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 9mA
Gate Charge (Qg) (Max) @ Vgs : 8.7nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 1000pF @ 20V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
0
17942 in stock
EPC2016
EPC
Manufacturer : EPC
Packaging : Tape & Reel (TR)
Series : eGaN®
Part Status : Discontinued at
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 16 mOhm @ 11A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs : 5.2nC @ 5V
Vgs (Max) : +6V, -5V
Input Capacitance (Ciss) (Max) @ Vds : 520pF @ 50V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 125°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
Packaging : Tape & Reel (TR)
Series : eGaN®
Part Status : Discontinued at
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 16 mOhm @ 11A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs : 5.2nC @ 5V
Vgs (Max) : +6V, -5V
Input Capacitance (Ciss) (Max) @ Vds : 520pF @ 50V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 125°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
0
100 in stock
EPC2016C
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 16 mOhm @ 11A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs : 4.5nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 420pF @ 50V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 16 mOhm @ 11A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs : 4.5nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 420pF @ 50V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
0
559632 in stock
EPC2018
EPC
Manufacturer : EPC
Packaging : Tape & Reel (TR)
Series : eGaN®
Part Status : Discontinued at
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 150V
Current - Continuous Drain (Id) @ 25°C : 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 25 mOhm @ 6A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs : 7.5nC @ 5V
Vgs (Max) : +6V, -5V
Input Capacitance (Ciss) (Max) @ Vds : 540pF @ 100V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 125°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
Packaging : Tape & Reel (TR)
Series : eGaN®
Part Status : Discontinued at
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 150V
Current - Continuous Drain (Id) @ 25°C : 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 25 mOhm @ 6A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs : 7.5nC @ 5V
Vgs (Max) : +6V, -5V
Input Capacitance (Ciss) (Max) @ Vds : 540pF @ 100V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 125°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
0
100 in stock
EPC2019
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 50 mOhm @ 7A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs : 2.5nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 270pF @ 100V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 50 mOhm @ 7A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs : 2.5nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 270pF @ 100V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
0
13668 in stock
EPC2020
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 90A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 2.2 mOhm @ 31A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs : 16nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 1780pF @ 30V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 90A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 2.2 mOhm @ 31A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs : 16nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 1780pF @ 30V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
0
7612 in stock
EPC2020ENGR
EPC
Manufacturer : EPC
Packaging : Tape & Reel (TR)
Series : eGaN®
Part Status : Discontinued at
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 2.2 mOhm @ 31A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs : 16nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 30V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
Packaging : Tape & Reel (TR)
Series : eGaN®
Part Status : Discontinued at
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 2.2 mOhm @ 31A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs : 16nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 30V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
0
100 in stock
EPC2021
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 90A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 2.5 mOhm @ 29A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 14mA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 1650pF @ 40V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 90A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 2.5 mOhm @ 29A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 14mA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 1650pF @ 40V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
0
3678 in stock
EPC2022
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 3.2 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 1500pF @ 50V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 3.2 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 1500pF @ 50V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
0
7395 in stock
EPC2023
EPC
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 1.3 mOhm @ 40A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 2300pF @ 15V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 1.3 mOhm @ 40A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 2300pF @ 15V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
0
8445 in stock
EPC2023ENG
EPC
Manufacturer : EPC
Packaging : Tray
Series : eGaN®
Part Status : Obsolete
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 1.3 mOhm @ 40A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 2300pF @ 15V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
Packaging : Tray
Series : eGaN®
Part Status : Obsolete
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 1.3 mOhm @ 40A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 2300pF @ 15V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
0
100 in stock
EPC2023ENGR
EPC
Manufacturer : EPC
Packaging : Tape & Reel (TR)
Series : eGaN®
Part Status : Discontinued at
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 1.3 mOhm @ 40A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 2300pF @ 15V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
Packaging : Tape & Reel (TR)
Series : eGaN®
Part Status : Discontinued at
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 1.3 mOhm @ 40A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 2300pF @ 15V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die
Package / Case : Die
0
100 in stock
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