EPC2110ENGRT
EPC2110ENGRT
Manufacturer : EPC
Packaging : Cut Tape (CT)
Alternate Packaging
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Dual) Common Source
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 120V
Current - Continuous Drain (Id) @ 25°C : 3.4A
Rds On (Max) @ Id, Vgs : 60 mOhm @ 4A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs : 0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 80pF @ 60V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Availability: 14247 in stock
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