EPC2101ENG
EPC2101ENG
Manufacturer : EPC
Packaging : Tray
Series : eGaN®
Part Status : Discontinued at
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 9.5A, 38A
Rds On (Max) @ Id, Vgs : 11.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs : 2.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 30V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Availability: 100 in stock
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