Toshiba Semiconductor and Storage
- Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.
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Part Number
Manufacturer
Description
Unit Price
In Stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 7GHz
Noise Figure (dB Typ @ f) : 1dB @ 500MHz
Gain : -
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : USM
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 7GHz
Noise Figure (dB Typ @ f) : 1.1dB @ 1GHz
Gain : 11dB ~ 16.5dB
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : USM
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 7GHz
Noise Figure (dB Typ @ f) : 1dB @ 500MHz
Gain : -
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-75, SOT-416
Supplier Device Package : SSM
0
7 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 7GHz
Noise Figure (dB Typ @ f) : 1dB @ 500MHz
Gain : -
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-75, SOT-416
Supplier Device Package : SSM
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 7GHz
Noise Figure (dB Typ @ f) : 1dB ~ 1.1dB @ 500MHz ~ 1GHz
Gain : -
Power - Max : 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-61AA
Supplier Device Package : SMQ
0
2425 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 8GHz
Noise Figure (dB Typ @ f) : 1.1dB ~ 2dB @ 1GHz
Gain : -
Power - Max : 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-61AA
Supplier Device Package : SMQ
0
2751 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 7GHz
Noise Figure (dB Typ @ f) : 1.1dB @ 1GHz
Gain : 13dB
Power - Max : 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-61AA
Supplier Device Package : SMQ
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 12V
Frequency - Transition : 7GHz
Noise Figure (dB Typ @ f) : 1dB @ 500MHz
Gain : 18dB
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 20mA, 10V
Current - Collector (Ic) (Max) : 80mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-82A, SOT-343
Supplier Device Package : USQ
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 10V
Frequency - Transition : 10GHz
Noise Figure (dB Typ @ f) : 1.8dB @ 2GHz
Gain : 13dB ~ 7dB
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 7mA, 6V
Current - Collector (Ic) (Max) : 15mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : SC-70
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 10V
Frequency - Transition : 10GHz
Noise Figure (dB Typ @ f) : 1.8dB @ 2GHz
Gain : 13dB ~ 7.5dB
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 7mA, 6V
Current - Collector (Ic) (Max) : 15mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : SC-70
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 10V
Frequency - Transition : 10GHz
Noise Figure (dB Typ @ f) : 1.4dB @ 1GHz
Gain : 1.4dB
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 7mA, 6V
Current - Collector (Ic) (Max) : 15mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-75, SOT-416
Supplier Device Package : SSM
0
100 in stock
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Series : -
Part Status : Discontinued at
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 10V
Frequency - Transition : 6GHz
Noise Figure (dB Typ @ f) : -
Gain : 11dB
Power - Max : 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 5mA, 5V
Current - Collector (Ic) (Max) : 30mA
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-75, SOT-416
Supplier Device Package : SSM
0
100 in stock