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ROHM Semiconductor

- ROHM was established in Kyoto, Japan, in 1958. ROHM designs and manufactures semiconductors, integrated circuits and other electronic components. These components find a home in the dynamic and ever-growing wireless, computer, automotive and consumer electronics markets. Some of the most innovative equipment and devices use ROHM products.

ROHM's presence in the North American market continues to expand with a logistic headquarters in San Diego, California, a design center in San Jose, California, a QA Center in Novi, Michigan, a sales office in Guadalajara, Mexico and a sales network that covers marketing, sales, and engineering support for the North and South American clients from Canada to Brazil. In addition to a direct sales force, ROHM enjoys the collaboration of several sales-representative organizations and industry leading electronics distributors.

For more than forty years, ROHM has stayed focused on the fundamental philosophy of customization. The company has worked closely with equipment manufacturers to develop next generation equipment and use the technology acquired through these efforts to propose system solutions to its customers and continually provide them with high added values.

The majority of ROHM's manufacturing equipment has been developed in-house. This has given ROHM the ability to respond immediately to changing market needs. The extent of ROHM products is a result of innovations and the capability to adjust to market demands. Automotive, telecommunication, computer, and consumer OEMs are among the leading end users of ROHM products.

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Part Number
Manufacturer
Description
Unit Price
In Stock

ZDS020N60TB ZDS020N60TB

Kionix
Manufacturer : Rohm Semiconductor
Packaging : Tape & Reel (TR)
Series : -
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 630mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 310pF @ 10V
FET Feature : -
Power Dissipation (Max) : 2W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP
Package / Case : 8-SOIC (0.154", 3.90mm Width)
0
100 in stock

ZDX050N50 ZDX050N50

Kionix
Manufacturer : Rohm Semiconductor
Packaging : Bulk
Series : -
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.5 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id : 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 25V
FET Feature : -
Power Dissipation (Max) : 40W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220FM
Package / Case : TO-220-3 Full Pack
0
360 in stock

ZDX080N50 ZDX080N50

Kionix
Manufacturer : Rohm Semiconductor
Packaging : Bulk
Series : -
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 850 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 23nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1120pF @ 25V
FET Feature : -
Power Dissipation (Max) : 40W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220FM
Package / Case : TO-220-3 Full Pack
0
432 in stock

ZDX130N50 ZDX130N50

Kionix
Manufacturer : Rohm Semiconductor
Packaging : Bulk
Series : -
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 520 mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 40nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2180pF @ 25V
FET Feature : -
Power Dissipation (Max) : 40W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220FM
Package / Case : TO-220-3 Full Pack
0
4 in stock

KXTJ3-1057-01 KXTJ3-1057-01

Kionix
Part No.:KXTJ3-1057-01
Manufacturer:Kionix
Package:LGA
Category:Optical Sensors - Photo Detectors - Remote Receiver
0
5925 in stock