Microchip Technology
- Microchip Technology Inc. is a leading provider of microcontroller and analog semiconductors, providing low-risk product development, lower total system cost and faster time to market for thousands of diverse customer applications worldwide. Headquartered in Chandler, Arizona, Microchip offers outstanding technical support along with dependable delivery and quality.
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Part Number
Manufacturer
Description
Unit Price
In Stock
VN2450N3-G
Microchip Technology
Manufacturer : Microchip Technology
Packaging : Bulk
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 200mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 13 Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 150pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
Packaging : Bulk
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 200mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 13 Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 150pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
0
815 in stock
VN2450N8-G
Microchip Technology
Manufacturer : Microchip Technology
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 250mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 13 Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 150pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-243AA (SOT-89)
Package / Case : TO-243AA
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 250mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 13 Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 150pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-243AA (SOT-89)
Package / Case : TO-243AA
0
4519 in stock
VN2460N3-G
Microchip Technology
Manufacturer : Microchip Technology
Packaging : Bulk
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 160mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 20 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id : 4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 150pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
Packaging : Bulk
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 160mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 20 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id : 4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 150pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
0
792 in stock
VN2460N8-G
Microchip Technology
Manufacturer : Microchip Technology
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 200mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 20 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id : 4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 150pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-243AA (SOT-89)
Package / Case : TO-243AA
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 200mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 20 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id : 4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 150pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-243AA (SOT-89)
Package / Case : TO-243AA
0
1494 in stock
VN3205N3-G
Microchip Technology
Manufacturer : Microchip Technology
Packaging : Bulk
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 1.2A (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 300 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
Packaging : Bulk
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 1.2A (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 300 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
0
601 in stock
VN3205N8-G
Microchip Technology
Manufacturer : Microchip Technology
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 1.5A (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 300 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-243AA (SOT-89)
Package / Case : TO-243AA
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 1.5A (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 300 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1.6W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-243AA (SOT-89)
Package / Case : TO-243AA
0
1508 in stock
VN4012L-G
Microchip Technology
Manufacturer : Microchip Technology
Packaging : Bulk
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 400V
Current - Continuous Drain (Id) @ 25°C : 160mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V
Rds On (Max) @ Id, Vgs : 12 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id : 1.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 110pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
Packaging : Bulk
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 400V
Current - Continuous Drain (Id) @ 25°C : 160mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V
Rds On (Max) @ Id, Vgs : 12 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id : 1.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 110pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
0
226 in stock
VP0104N3-G
Microchip Technology
Manufacturer : Microchip Technology
Packaging : Bulk
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 250mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 8 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
Packaging : Bulk
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 250mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 8 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
0
533 in stock
VP0106N3-G
Microchip Technology
Manufacturer : Microchip Technology
Packaging : Bulk
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 250mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 8 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
Packaging : Bulk
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 250mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 8 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
0
1013 in stock
VP0109N3-G
Microchip Technology
Manufacturer : Microchip Technology
Packaging : Bulk
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 90V
Current - Continuous Drain (Id) @ 25°C : 250mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 8 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
Packaging : Bulk
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 90V
Current - Continuous Drain (Id) @ 25°C : 250mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 8 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
0
1484 in stock
VP0550N3-G
Microchip Technology
Manufacturer : Microchip Technology
Packaging : Bulk
Alternate Packaging
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 54mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 125 Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id : 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 70pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
Packaging : Bulk
Alternate Packaging
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 54mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 125 Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id : 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 70pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
0
973 in stock
VP0808L-G
Microchip Technology
Manufacturer : Microchip Technology
Packaging : Bulk
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 280mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 5 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 150pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
Packaging : Bulk
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 280mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 5 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 150pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
0
156 in stock
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